GENESIS GHW55A-13DF4L0射频发生器 PDF资料
1.产 品 资 料 介 绍：
GENESIS GHW55A-13DF4L0 是 MKS/ENI 旗下 GHW 系列的一款高性能 13.56MHz 射频等离子发生器，输出功率 5500W，专为半导体制造中的 PECVD、刻蚀等薄膜工艺而设计。
产品特点（15条）
最初由 ENI 生产，现属 MKS Instruments 旗下
完整型号包含 GHW55A-13DF4L0-001 和 -002 两种版本
额定输出功率 5500W
工作频率 13.56MHz，精度 ±0.005%
频率稳定性高，确保工艺一致性
可在任何负载阻抗范围内稳定运行
杂散输出低于 -45dBc，信号纯净
谐波输出低于 -40dBc，干扰小
前面板可显示正向、反射及负载功率
配备 RS-232 9 针数字通信接口
兼容标准 19 英寸 EIA 机架安装
水冷散热，流量 7.5L/min，水温 5-35℃
三相 200-208V AC 输入，38A，50-60Hz
转换效率高达 92%
具备过压、过流保护及温度补偿功能
结尾
GHW55A-13DF4L0 以 5500W 大功率、13.56MHz 精准频率及全负载稳定能力为核心优势，是半导体刻蚀与沉积工艺中射频等离子体生成的可靠选择。
GENESIS GHW55A-13DF4L0射频发生器 英文介绍
GENESIS GHW55A-3DF4L0 is a high-performance 13.56MHz RF plasma generator under the MKS/ENI GHW series, with an output power of 5500W, designed specifically for thin film processes such as PECVD and etching in semiconductor manufacturing.
Product features (15 items)
Originally produced by ENI, now under the umbrella of MKS Instruments
The complete model includes two versions: GHW55A-13DF4L0-001 and -002
Rated output power 5500W
Working frequency 13.56MHz, accuracy ± 0.005%
High frequency stability ensures process consistency
Can operate stably within any load impedance range
Stray output below -45dBc, signal purity
Harmonic output below -40dBc, low interference
The front panel can display forward, reflected, and load power
Equipped with RS-232 9-pin digital communication interface
Compatible with standard 19 inch EIA rack installation
Water cooling heat dissipation, flow rate 7.5L/min, water temperature 5-35 ℃
Three phase 200-208V AC input, 38A, 50-60Hz
Conversion efficiency up to 92%
Equipped with overvoltage, overcurrent protection, and temperature compensation functions
ending
GHW55A-13DF4L0 has the core advantages of 5500W high power, precise frequency of 13.56MHz, and full load stability, making it a reliable choice for RF plasma generation in semiconductor etching and deposition processes.
GENESIS GHW55A-13DF4L0射频发生器 产品展示
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