AE 3155132-010大电流射频匹配导航器 PDF资料
AE 3155132-010 是 Advanced Energy(AE)Navigator 3013 系列的一款大电流射频匹配网络,也叫自动匹配器或 Match Box,用在半导体等离子设备里做阻抗匹配。
它有哪些特点
属于 AE Navigator 3013 系列,是自动射频匹配网络
工作频率 13.56 MHz,半导体等离子工艺的标准频率
大电流设计,对应型号里的 High Current
功率等级 3000W,适配中等功率射频工艺
负责把射频发生器的输出阻抗和等离子腔体的负载阻抗调匹配
减少反射功率,让射频能量高效送进腔体
常见于 AMAT 设备,对应 AMAT 零件号 0190-48172
市面流通较多,二手、翻新和全新库存都有
内部编号 IPN 633017499
属于 Navigator 系列,AE 后续还有 Navigator II 作为升级替代
都用在哪些地方
AMAT 半导体制造设备
等离子蚀刻工艺
等离子增强化学气相沉积
物理气相沉积系统
其他需要 13.56 MHz 射频等离子处理的真空设备
总的来说,AE 3155132-010 就是 Navigator 3013 系列里的一款大电流射频匹配器,专门给 AMAT 等离子设备做阻抗匹配,是半导体制造中射频能量传输链路的关键部件。
AE 3155132-010大电流射频匹配导航器 英文介绍
AE 3155132-010 is a high current RF matching network from the Advanced Energy (AE) Navigator 3013 series, also known as an automatic matching device or Match Box, used for impedance matching in semiconductor plasma equipment.
What are its characteristics
Belonging to the AE Navigator 3013 series, it is an automatic RF matching network
Working frequency 13.56 MHz, standard frequency for semiconductor plasma process
High current design, corresponding to the High Current in the model
Power level 3000W, suitable for medium power RF technology
Responsible for matching the output impedance of the RF generator with the load impedance of the plasma chamber
Reduce reflected power to efficiently deliver RF energy into the cavity
Commonly seen in AMAT equipment, corresponding to AMAT part number 0190-48172
There are many circulating items in the market, including second-hand, refurbished, and brand new inventory
Internal code IPN 633017499
Belonging to the Navigator series, AE will have Navigator II as an upgrade replacement in the future
Where are they used
AMAT Semiconductor Manufacturing Equipment
Plasma etching process
Plasma enhanced chemical vapor deposition
Physical vapor deposition system
Other vacuum equipment requiring 13.56 MHz RF plasma treatment
Overall, AE 3155132-010 is a high current RF matching device in the Navigator 3013 series, specifically designed for impedance matching of AMAT plasma equipment. It is a key component in the RF energy transmission link of semiconductor manufacturing.

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