Lam 660-178383-001 射频发生器 PDF资料
1.产 品 资 料 介 绍：
Lam 660-178383-001 射频发生器 产品简介
Lam 660-178383-001 是 Lam Research（泛林集团）半导体刻蚀设备配套的一款大功率射频发生器，实际由 ENI（现为 MKS Instruments）代工制造，对应型号为 GENESIS GHW-50A。该设备在等离子体工艺中为蚀刻、沉积等制程提供稳定的射频能量。
产品特点
由 ENI Power Systems 制造，对应型号 GENESIS GHW-50A。
归属于 Lam Research 原厂备件体系，备件号为 660-178383-001。
输出功率为 5kW，适配中等至大功率制程需求。
输出频率为 13.56MHz，工业标准射频频率。
在半导体设备备件市场中有一定流通性，可供采购。
适用于 Lam Research 半导体刻蚀设备的维修替换。
市场上有经过测试功能正常的工作品可供选择。
作为备件市场常见型号，可参考市场报价进行评估。
产品参数
型号：660-178383-001 / GENESIS GHW-50A。
制造商：ENI（MKS Instruments）。
输出功率：5,000W（5kW）。
输出频率：13.56MHz。
适配设备：Lam Research 半导体刻蚀系统。
综上所述，Lam 660-178383-001 作为 ENI 制造、Lam Research 体系认证的 5kW 射频发生器，能够为半导体刻蚀工艺提供可靠的射频能量源。
Lam 660-178383-001 RF Generator Product Introduction
Lam 660-178383-001 is a high-power RF generator used in conjunction with Lam Research's semiconductor etching equipment. It is actually manufactured by ENI (now MKS Instruments) and corresponds to the model GENESIS GHW-50A. This device provides stable RF energy for processes such as etching and deposition in plasma technology.
Product Features
Made by ENI Power Systems, corresponding to model GENESIS GHW-50A.
Belonging to Lam Research's original spare parts system, part number 660-178383-001.
The output power is 5kW, suitable for medium to high power process requirements.
The output frequency is 13.56MHz, which is the industry standard RF frequency.
There is a certain degree of liquidity in the semiconductor equipment spare parts market, which can be purchased.
Suitable for maintenance and replacement of Lam Research semiconductor etching equipment.
There are work products available in the market that have been tested and proven to function properly.
As a common model in the spare parts market, it can be evaluated based on market quotations.
Product Parameters
Model: 660-178383-001/GENESIS GHW-50A.
Manufacturer: ENI (MKS Instruments).
Output power: 5000W (5kW).
Output frequency: 13.56MHz.
Adaptation equipment: Lam Research semiconductor etching system.
In summary, Lam 660-178383-001, as a 5kW RF generator manufactured by ENI and certified by Lam Research system, can provide a reliable RF energy source for semiconductor etching processes.
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| PCE835-XYZ-T |  6SC6103-0SE31 | MC-TAIH52 |
| PCE835-XYZ-N | 6SC6100-0GE01 | MC-TAIH53 |
| PCE835-XYZ-A | 6SC6101-3B-Z | MC-TAIH62 |
| PCE835-001-T | 6SC9711-0BM0 | MC-PDOY22 80363975-150 |
| PCE835-001-N | 6SC6101-4A-Z | MC-PD1X02 |
| PCE833-001-T | GESPAC PIA-2A | MC-TAIL02 |
| PCE833-001-N | 6SC6101-2A-Z | MC-TAIL12 |
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