GHW55A-13DF4L0-002 射频发生器 PDF资料
1.产 品 资 料 介 绍：
GHW55A-13DF4L0-002 射频发生器
该型号为ENI（现为MKS Instruments旗下）Genesis系列大功率射频发生器，型号标识为GHW-55A，是Genesis GHW-50系列的一员。该设备输出功率5500W @ 13.56MHz，主要用于半导体刻蚀、PECVD薄膜沉积等工艺中的等离子体激发，是TEL、AMAT等主流半导体设备的OEM配套备件。
产品特点
输出功率5500W，固定主频13.56MHz，频率精度达±0.005%。
输入电源三相200-208V AC，额定输入电流38A，50/60Hz通用。
全固态功率架构，功率稳态误差≤±0.5%，腔体负载突变时可快速闭环稳功。
优异的驻波耐受能力，可在高反射负载下连续运行，噪声抑制<-45dBc，谐波失真<-40dBc。
N型射频输出接口，标配RS232串行通讯，支持上位机远程功率控制与状态读取。
内置过温、过流、过驻波、输出短路等多重保护，异常情况自动锁定报警。
集成风道风冷散热，满载长期运行温升可控，适配半导体洁净机房环境。
数字锁相DPLL电路确保射频信号稳定，腔体启辉阻抗突变时无跳频。
机架标准尺寸，适配19英寸机柜安装，带卡扣紧固件，拆换便捷。
DF4L0定制接口配置，匹配TEL和AMAT原厂镀膜/刻蚀设备主控接线定义。
核心参数
制造商：ENI（MKS Instruments）。
型号：GHW-55A / Genesis GHW-50。
部件编号：GHW55A-13DF4L0-002。
输出功率：5500W @ 13.56MHz。
电源输入：三相200-208V AC，50/60Hz。
总结
GHW55A-13DF4L0-002（GHW-55A）是ENI Genesis系列的一款5500W工业级射频发生器，工作频率13.56MHz。该型号主要作为半导体刻蚀、PECVD等工艺设备的高频电源配套使用，以全固态架构、稳定的频率精度和多重保护机制为核心特点
GHW55A-13DF4L0-002 RF Generator
This model is the ENI (now under MKS Instruments) Genesis series high-power RF generator, identified as GHW-55A, and is a member of the Genesis GHW-50 series. This device has an output power of 5500W @ 13.56MHz and is mainly used for plasma excitation in semiconductor etching, PECVD thin film deposition and other processes. It is an OEM spare part for mainstream semiconductor equipment such as TEL and AMAT.
Product Features
Output power of 5500W, fixed main frequency of 13.56MHz, frequency accuracy of ± 0.005%.
Input power supply three-phase 200-208V AC, rated input current 38A, 50/60Hz universal.
All solid state power architecture, power steady-state error ≤ ± 0.5%, can quickly close loop and stabilize power when the cavity load suddenly changes.
Excellent standing wave tolerance, capable of continuous operation under high reflection loads, noise suppression<-45dBc, harmonic distortion<-40dBc.
N-type RF output interface, standard RS232 serial communication, supports remote power control and status reading from the upper computer.
Built in multiple protections such as over temperature, over current, over standing wave, and output short circuit, with automatic locking alarm for abnormal situations.
Integrated air duct for air cooling and heat dissipation, with controllable temperature rise during long-term operation at full load, suitable for semiconductor clean room environments.
The digital phase-locked DPLL circuit ensures stable RF signals and no frequency hopping during sudden impedance changes in the cavity.
Rack standard size, suitable for installation in 19 inch cabinets, with card fastening firmware, easy to remove and replace.
DF4L0 customized interface configuration, matching TEL and AMAT original factory coating/etching equipment main control wiring definitions.
Core parameters
Manufacturer: ENI (MKS Instruments).
Model: GHW-55A/Genesis GHW-50.
Part number: GHW55A-13DF4L0-002.
Output power: 5500W @ 13.56MHz.
Power input: three-phase 200-208V AC, 50/60Hz.
Summary
GHW55A-13DF4L0-002 (GHW-55A) is a 5500W industrial grade RF generator from the ENI Genesis series, operating at a frequency of 13.56MHz. This model is mainly used as a high-frequency power supply for semiconductor etching, PECVD and other process equipment, with the core features of all solid state architecture, stable frequency accuracy and multiple protection mechanisms
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