GE DS200SDCIG2AHB模块控制器卡
EnerVista PQM设置中实现了跟踪内存功能，如下所示。Z选择设定点>PQM设置菜单项以设置跟踪记忆功能。这将启动下图所示的PQM设置对话框。Z单击跟踪内存选项卡以显示跟踪内存参数。内存使用设置如下：•1 x 36个周期：触发时，整个缓冲区填充36个数据周期•2 x 18个周期：创建2个单独的18周期缓冲区，每个缓冲区在触发时填充•3 x 12个周期：生成3个单独的12周期缓冲区并在触发时每个缓冲区填充如果触发模式设置为一次触发，则每个缓冲区触发一次跟踪存储器；如果设置为“重新触发”，则会自动重新触发并覆盖先前的数据。触发延迟将触发延迟指定的周期数。电压、电流和开关输入选项是用于触发跟踪存储器的参数和电平。Z单击“存储”将当前设置发送到PQM。
The trace memory feature is implemented into EnerVista PQM Setup as shown below. Z Select the Setpoint > PQM Setup menu item to setup the trace memory feature. This launches the PQM Setup dialog box shown below. Z Click on the Trace Memory tab to display the trace memory parameters The Memory Usage is set as follows: • 1 x 36 cycles: upon trigger, the entire buffer is filled with 36 cycles of data • 2 x 18 cycles: 2 separate 18-cycle buffers are created and each is filled upon a trigger • 3 x 12 cycles: 3 separate 12 cycle buffers are created and each is filled upon a trigger If the Trigger Mode is set to One-Shot, then the trace memory is triggered once per buffer; if it is set to Retrigger, then it automatically retriggers and overwrites the previous data. The Trigger Delay delays the trigger by the number of cycles specified. The VOLTAGE, CURRENT, and SWITCH INPUTS selections are the parameters and levels that are used to trigger the trace memory. Z Click Store to send the current settings to the PQM.
