特点：全扩散结构

全扩散结构。放大栅极配置。阻断能力敢达1800伏。高dV/dt能力。压力组装设备电气特性和额定值阻断-关断状态设备类型VRRM（1）VDRM（1个）VRSM（1）KP2500/12 1200 1200 1400 KP2500/14 1400 1400 1600 KP2500/16 1600 1600 1800 KP2500/28 1800 1800 2000 VRRM=重复峰值反向电压VDRM=重复峰值关断状态电压VRSM=非重复峰值反向电压（2）重复峰值反向泄漏和关断状态泄漏IRRM/IDRM 5 mA 150 mA（3）临界电压上升率dV/dt（4）1000 V/秒导通-接通状态http://www.chinarunau.com第1页，共3页KT70cT注：（1）所有电压额定值均适用于0至+125 oC温度范围内施加的50Hz/60Hz正弦波形。（2） 10毫秒。最大脉冲宽度（3）Tj=125 oC时的最大值。（4） 线性和指数波形的最小值为67%额定VDRM。闸门打开。Tj=125℃。(5).di/dt的值根据标准JB/T 8950.2-2013参数符号最小值最大值标准确定。单位条件导通电流平均值IT（AV）2500 A正弦波，180°导通。

使用参数

Tc=70°C导通电流RMS值ITRMS 3925 A标称值峰值一周浪涌（非重复）电流ITSM 30000 A 10.0 ms（50Hz），正弦波形，180°传导，Tj=125 oC I平方t 2 t 4.5x106 A2s 10 ms锁存电流IL 1000 mA VD=12 V；RL=12欧姆保持电流IH 200 mA VD=12 V；I=2.5 A峰值导通状态电压VTM 1.45 V ITM=3000A；Tj=25oC阈值电压，低电平VTO 0.92 V Tj=125oC斜坡电阻，低电平rT 0.12 mΩ 2500A至5000A通态电流的临界上升率di/dt 200 A/s重复江苏杨捷润诺半导体有限公司电气特性和额定值KP2500-功率晶闸管选通参数符号最小最大典型值。单位条件峰值栅功耗PGM 20 W平均栅功耗PG（AV）4 W栅触发电流IGT 200 mA VD=12 V；RL=3欧姆；Tj=+25 oC栅极-触发电压VGT 0.70 2.5 V VD=12 V；RL=3欧姆；Tj=+25 oC峰值负电压VGRM 5 V动态参数符号最小值最大值典型值。机组条件延迟时间td 3.0 2.5s ITM=100 A；VD＝67%VDRM栅极脉冲：VG＝30V；RG=10欧姆；tr=0.1μs；tp=20μs关断时间（VR=-5 V）tq 300s ITM=1000 A；di/dt=-10 A/sVR＝50伏；dV/dt=30V/sVD=67%VDRM；Tj=125 oC反向恢复电荷Qrr 2500C ITM=1000Adi/dt=-10A/s；VR＝50伏；Tj=125℃热特性和机械特性及额定值参数符号最小值最大值典型值。机组条件工作温度Tj-40+125 oC存储温度Ttg-40+140 oC热阻-连接到外壳R¦（j-c）0.0125 oC/W双面冷却热阻-外壳到散热器R¦。，有限公司外壳轮廓和尺寸KP2500-功率晶闸管

Fully diffused structure.

Fully diffused structure. Amplify the grid configuration. The blocking ability can reach 1800 volts. High dV/dt capability. Electrical characteristics and ratings of pressure assembly equipment Blocking off state Equipment type VRRM (1) VDRM (1) VRSM (1) KP2500/12 1200 1200 1400 KP2500/14 1400 1600 KP2500/16 1600 1800 KP2500/28 1800 1800 2000 VRRM=repetitive peak reverse voltage VDRM=repetitive peak off state voltage VRSM=non repetitive peak reverse voltage (2) repetitive peak reverse leakage and off state leakage IRRM/IDRM 5 mA 150 mA (3) Critical voltage rise rate dV/dt (4) 1000 V/ s conduction on state http://www.chinarunau.com Page 1 of 3 KT70cT Note: (1) All voltage ratings are applicable to 50Hz/60Hz sinusoidal waveform applied within the temperature range of 0 to+125 oC. (2) 10 ms. Maximum pulse width (3) Tj=maximum value at 125 oC. (4) The minimum value of linear and exponential waveforms is 67% of rated VDRM. The gate is open. Tj=125℃。 (5). The value of di/dt is determined according to the standard JB/T 8950.2-2013 minimum value and maximum value of parameter symbols. Average value of conduction current under unit condition IT (AV) 2500 A sine wave, 180 ° conduction.

Working with parameters 

Tc=70 ° C conduction current RMS value ITRMS 3925 A nominal value peak one cycle surge (non repetitive) current ITSM 30000 A 10.0 ms (50Hz), sinusoidal waveform, 180 ° conduction, Tj=125 oC I square t 2 t 4.5x106 A2s 10 ms latch current IL 1000 mA VD=12 V; RL=12 ohm holding current IH 200 mA VD=12 V; I=2.5 A peak conduction state voltage VTM 1.45 V ITM=3000 A; Tj=25oC threshold voltage, low level VTO 0.92 V Tj=125oC slope resistance, low level rT 0.12 m Ω 2500A to 5000A critical rise rate of on state current di/dt 200 A/s repeat the electrical characteristics and rating of Jiangsu Yangjie Runuo Semiconductor Co., Ltd. KP2500 - minimum and maximum typical value of power thyristor gating parameter symbol. Peak gate power consumption per unit condition PGM 20 W Average gate power consumption PG (AV) 4 W Gate trigger current IGT 200 mA VD=12 V; RL=3 ohms; Tj=+25 oC grid trigger voltage VGT 0.70 2.5 V VD=12 V; RL=3 ohms; Tj=+25 oC peak negative voltage VGRM 5 V dynamic parameter sign minimum value maximum value typical value. Unit condition delay time td 3.0 2.5  s ITM=100 A; VD=67% VDRM grid pulse: VG=30V; RG=10 ohms; tr=0.1 μ s； tp=20 μ S Off time (VR=- 5 V) tq 300  s ITM=1000 A; Di/dt=- 10 A/ sVR=50 V; dV/dt=30V/sVD=67%VDRM； Tj=125 oC Reverse recovery charge Qrr 2500  C ITM=1000 Adi/dt=- 10A/s; VR=50 V; Tj=125 ℃ typical value of minimum value and maximum value of thermal and mechanical characteristics and rating parameter symbols. Unit condition Operating temperature Tj-40+125 oC Storage temperature Ttg-40+140 oC Thermal resistance - connected to housing R ¦ (j-c) 0.0125 oC/W double-sided cooling thermal resistance - shell to radiator R ¦。， Company Limited Shell Outline and Dimensions KP2500 - Power Thyristors

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品牌：ABB

型号 :KP2500

产地：瑞士

质保：365天

成色：全新/二手

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