AMAT Applied Materials 0100-01652气体面板 PDF资料
1.产 品 资 料 介 绍：
AMAT Applied Materials 0100-01652 气体面板
产品概述
0100-01652 是应用于 AMAT 半导体工艺设备中的 气体面板（Gas Panel Module）。它作为气体输送与控制的关键子系统，用于将工艺所需的多种高纯气体（如 SiH₄、NH₃、N₂、Ar 等）按设定流量和压力，稳定且安全地输送到真空反应腔体。
技术功能与特点
气体流量控制
集成质量流量控制器（MFC），精确调节每种工艺气体的流量。
支持多通道气体分配，满足复杂工艺配方需求。
气路切换与分配
通过电磁阀、隔膜阀等实现气体的开关与路径切换。
具备防止气体交叉污染的设计。
压力与纯度保障
设有压力传感器和调节阀，确保气体以合适的压力进入工艺腔。
管路与阀件采用不锈钢或高纯材料，保证气体纯度，避免颗粒或杂质。
安全与互锁
配备气体泄漏检测与自动切断机制。
与整机控制系统互锁，在异常情况下自动关闭气路。
应用领域
化学气相沉积 (CVD) 设备
用于控制前驱体气体与反应气体的比例与流量，实现薄膜沉积（如 SiO₂、Si₃N₄、金属氧化物等）。
物理气相沉积 (PVD) 设备
在溅射工艺中，引入工作气体（如 Ar）或反应气体（如 O₂、N₂）控制沉积特性。
刻蚀设备 (Etch)
精确配比 CF₄、CHF₃、Cl₂ 等气体，调节刻蚀速率与选择性。
清洗与表面处理设备
输送 O₂、H₂ 等气体进行等离子清洗或表面活化处理。
AMAT Applied Materials 0100-01652气体面板 英文资料：
AMAT Applied Materials 0100-01652 Gas Panel
Product Overview
0100-01652 is a gas panel module used in AMAT semiconductor process equipment. As a key subsystem for gas delivery and control, it is used to stably and safely deliver various high-purity gases required for the process (such as SiH ₄, NH ∝, N ₂, Ar, etc.) to the vacuum reaction chamber at the set flow rate and pressure.
Technical functions and features
Gas flow control
Integrated Mass Flow Controller (MFC) to precisely regulate the flow rate of each process gas.
Support multi-channel gas distribution to meet the requirements of complex process formulas.
Gas path switching and allocation
Gas switching and path switching are achieved through solenoid valves, diaphragm valves, etc.
Designed to prevent cross contamination of gases.
Pressure and purity assurance
Equipped with pressure sensors and regulating valves to ensure that gas enters the process chamber at an appropriate pressure.
The pipelines and valves are made of stainless steel or high-purity materials to ensure gas purity and avoid particles or impurities.
Security and Interlocking
Equipped with gas leak detection and automatic shut-off mechanism.
Interlock with the overall control system and automatically close the air circuit in case of abnormal conditions.
Application field
Chemical Vapor Deposition (CVD) Equipment
Used to control the ratio and flow rate of precursor gas and reaction gas, achieving thin film deposition (such as SiO ₂, Si ∝ N ₄, metal oxides, etc.).
Physical Vapor Deposition (PVD) equipment
In the sputtering process, introducing working gas (such as Ar) or reactive gas (such as O ₂, N ₂) controls the deposition characteristics.
Etch etching equipment
Accurately mix CF ₄, CHF ∝, Cl ₂ and other gases to adjust the etching rate and selectivity.
Cleaning and surface treatment equipment
Transport gases such as O ₂ and H ₂ for plasma cleaning or surface activation treatment.
AMAT Applied Materials 0100-01652气体面板 产品展示
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| STF3624-4976-61-56BC | SC403-013-T2 | SC753A-040-08 |
| STC3720-4085-56C | SC403-013-T4 | SC90200101NNN |
| SRF5570-4986-84-5-82BC-CU | SC403-001-T1 | SC933-NN-001-01 |
| SRF5570-4483-84-82BC | SC402-001-T4 | SC756B-001-01 |
| SRF5360-4985-84-5-82BC-CU | SC402-048-T4 | SC905-001-01 |
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